Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions

ABSTRACT

The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.

TECHNICAL FIELD

[0001] The invention pertains to methods of forming nitrogen-containingmasses and silicon nitride layers. The invention also pertains tomethods of forming capacitor constructions.

BACKGROUND OF THE INVENTION

[0002] Silicon nitride is commonly utilized as an insulative materialduring semiconductor device fabrication. For instance, silicon nitridecan be utilized as a dielectric material in capacitor constructions.Another use for silicon nitride in semiconductor device fabrication isas a barrier layer to impede migration of, for example, oxygen,hydrogen, and metallic materials.

[0003] It can be desired to simultaneously deposit silicon nitride overa conductively-doped silicon material and a silicon oxide. For instance,it can be desired to deposit silicon nitride over conductively-dopedpolycrystalline silicon to form an insulative material over thepolycrystalline silicon, and to simultaneously deposit the siliconnitride over borophosphosilicate glass (BPSG) to form a barrier layerover the BPSG.

[0004] A difficulty that can occur during such simultaneous depositionof silicon nitride is that the silicon nitride can form much morerapidly over the polycrystalline silicon than over the BPSG.Specifically, a nucleation rate of silicon nitride on silicon istypically significantly higher than it is on silicon oxides.Accordingly, the silicon nitride thickness over the polycrystallinesilicon will be much thicker than that over the silicon oxide. Forinstance, a 50 Å thick silicon nitride layer can be formed onhemispherical grain polysilicon in about the time that it takes to growa 20 Å thick silicon nitride layer on BPSG. The 20 Å thick siliconnitride layer may not be sufficient to be a suitable barrier layer tosubsequent penetration of undesirable materials through the siliconnitride and into the BPSG. If materials penetrate into the BPSG, theycan subsequently penetrate through the BPSG and to an underlying activeregion, which can ultimately cause failure of devices formed relative tothe active region.

[0005] One solution to the above-described difficulty is to grow athicker layer of silicon nitride on the polycrystalline silicon toenable a sufficiently thick barrier layer to be formed on the BPSG.However, such can result in too thick of a silicon nitride layer beingdeposited on the polycrystalline silicon for later use as a dielectricmaterial in a capacitor device. It would be desirable to developmethodology whereby silicon nitride can be simultaneously deposited overa silicon oxide and a conductively-doped silicon material, with thedeposition rate being substantially the same over both the siliconoxide-containing material and the conductively-doped silicon material.

SUMMARY OF THE INVENTION

[0006] In one aspect, the invention encompasses a method of forming anitrogen-containing mass. A substrate is provided, and the substratecomprises a silicon-containing mass and a silicon oxide-containing mass.The silicon-containing mass has substantially no oxygen therein. A firstnitrogen-containing mass is formed to be across the siliconoxide-containing mass and not across the silicon-containing mass. Afterthe first nitrogen-containing mass is formed, a secondnitrogen-containing mass is formed to extend across thesilicon-containing mass and across the silicon oxide-containing mass,with the second nitrogen-containing mass being over the firstnitrogen-containing mass.

[0007] In another aspect, the invention encompasses a method of forminga silicon nitride layer. A substrate is provided which comprises a firstmass and a second mass. The first mass comprises silicon and the secondmass comprises silicon oxide. A sacrificial layer is formed over thefirst mass. While the sacrificial layer is over the first mass, anitrogen-containing material is formed across the second mass. After thenitrogen-containing material is formed, the sacrificial layer isremoved. Subsequently, a silicon nitride layer is formed to extendacross the first and second masses, with the silicon nitride layer beingover the nitrogen-containing material. Also, a conductivity-enhancingdopant is provided within the first mass.

[0008] In yet another aspect, the invention pertains to methods offorming capacitor constructions.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0010]FIG. 1 is a diagrammatic, cross-sectional view of a semiconductorwafer fragment at a preliminary processing step of a method of thepresent invention.

[0011]FIG. 2 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 1.

[0012]FIG. 3 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 2.

[0013]FIG. 4 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 3.

[0014]FIG. 5 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 4.

[0015]FIG. 6 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 5.

[0016]FIG. 7 is a view of the FIG. 1 wafer fragment shown at aprocessing step subsequent to that of FIG. 6.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0018] An exemplary process of the present invention is described withreference to FIGS. 1-7. Referring initially to FIG. 1, a semiconductorwafer fragment 10 is illustrated at a preliminary processing step of amethod of the present invention. Wafer fragment 10 includes a substrate12. Substrate 12 can comprise, for example, monocrystalline siliconlightly doped with p-type background dopant. To aid in interpretation ofthe claims that follow, the terms “semiconductive substrate” and“semiconductor substrate” are defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone-or in assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove.

[0019] A pair of wordlines 14 and 16 are supported by substrate 12.Wordline 16 is provided on an isolation region 18 which can comprise,for example, a shallow trench isolation region of silicon dioxide.Wordline 14 has a pair of source/drain regions 18 and 20 providedadjacent thereto, and functions as a transistor gate to gatedly couplesource/drain regions 18 and 20 with one another. Source/drain regions 18and 20 can comprise, for example, n-type or p-type doped regions ofsemiconductive substrate 12. Source/drain regions 18 and 20 wouldtypically be heavily-doped (with the term “heavily-doped” referring to adopant concentration of at least 10¹⁹ atoms/cm³). Also shown in FIG. 1are lightly-doped source/drain regions 22 and 24 (with the term“lightly-doped” referring to a source/drain region having a dopantconcentration of less than 10¹⁹ atoms/cm³) which extend from wordline 14to heavily-doped regions 18 and 20. Regions 22 and 24 can compriseeither n-type dopant or p-type dopant.

[0020] Wordlines 14 and 16 comprise layers 26, 28, 30 and 32 patternedinto stacks. Layer 26 is a pad oxide, and typically comprises silicondioxide; layer 28 typically comprises conductively-doped silicon, suchas, for example, conductively-doped polycrystalline silicon; layer 30typically comprises metal silicide, such as, for example, tungstensilicide or titanium silicide; and layer 32 typically comprises aninsulative cap, such as, for example, silicon nitride.

[0021] A pair of sidewall spacers 34 are formed along sidewalls ofwordline 14, and a pair of sidewall spacers 36 are formed alongsidewalls of wordline 16. The sidewall spacers can comprise, forexample, silicon nitride.

[0022] An insulative mass 40 is formed over substrate 12, and overwordlines 14 and 16. Mass 40 can comprise a silicon oxide, such as, forexample, BPSG. Accordingly, mass 40 can be considered a siliconoxide-containing mask. Mass 40 has an upper surface 41.

[0023] An opening 42 is formed within mass 40 and extends tosource/drain region 20. Opening 42 can be formed by, for example,providing a patterned photoresist mask (not shown) over insulative mass40, and subsequently etching mass 40 to transfer a pattern from thepatterned photoresist mask to mass 40. Subsequently, the photoresistmask can be removed.

[0024] A semiconductive material 44 is provided over mass 40 and withinopening 42. Semiconductive material 44 can, for example, comprisesilicon, consist essentially of silicon, consist essentially ofconductively-doped silicon, or consist of conductively-doped silicon. Inthe shown embodiment, semiconductive material 44 has a roughened surface46, and accordingly can correspond to rugged polycrystalline silicon,such as, for example, to hemispherical grain polysilicon.

[0025] Semiconductive material 44 is ultimately doped withconductivity-enhancing dopant to transform semiconductive material 44into a conductive material. Such doping can occur in situ duringformation of semiconductive material 44, or can occur subsequent toformation of semiconductive material 44 by, for example, ionimplantation.

[0026] Semiconductive material 44 can be a silicon-containing masshaving substantially no oxygen therein. It is noted that ifsemiconductive material 44 is a silicon-containing mass, there can be athin layer of native oxide (not shown) that forms over layer 44 if layer44 is exposed to an oxygen ambient. Even if such thin layer of nativeoxide forms over layer 44, layer 44 is still considered to havesubstantially no oxygen therein because the majority of the oxygen willbe associated with a surface of layer 44 rather than extending intolayer 44. Since there can be a small amount of oxygen that penetratesthe upper surface of layer 44 during formation of native oxide acrosssuch upper surface, the term “substantially no oxygen” is utilizedinstead of saying that there is absolutely no oxygen within layer 44 inrecognition of such small amount of oxygen that can penetrate material44 during formation of silicon dioxide across a surface of material 44.However, even if a layer of silicon dioxide is over mass 44, the bulk ofmass 44 can remain non-oxidized and can accordingly be considered tocorrespond to a non-oxidized silicon-containing mass.

[0027] A distinction between mass 44 and silicon dioxide mass 40 is thatthere will be a difference in a rate of silicon nitride formation overmass 44 relative to mass 40 if conventional methods are utilized forgrowing silicon nitride simultaneously over the material of mass 44 andthe material of mass 40.

[0028] If desired, silicon-containing mass 44 can be treated withnitrogen to alleviate or prevent native oxide growth. For instance, anitrogen-containing layer (not shown) can be formed over mass 44 byexposing the mass to ammonia at a temperature of from about 300° C. toabout 900° C. and a pressure of from about 2 mTorr to about 1 atmospherefor a time of from about 30 seconds to about 60 minutes, to form thenitrogen layer to a thickness of less than about 10 Å. Suitablemethodology can include thermal methods and/or plasma assisted methods.Preferably, the nitrogen layer will be formed to a thickness of fromabout 5 Å to about 10 Å, with a monolayer of the nitrogen-comprisinglayer being most preferred. The nitrogen-comprising layer will typicallybe silicon nitride. A preferred pressure for forming thenitrogen-comprising layer can be from about 1 Torr to about 10 Torr.

[0029] Referring to FIG. 2, a sacrificial layer 50 is formed withinopening 42 and over a portion of mass 44 that extends within suchopening. Sacrificial material 50 can comprise, for example, photoresist,and can be formed by providing a layer of photoresist across an entiretyof an upper surface of wafer fragment 10, and subsequentlyphotolithographically patterning the photoresist to leave only a portionof the photoresist remaining within opening 42. Alternatively, thephotoresist can be removed by chemical-mechanical polishing.

[0030] Photoresist 50 is shown having an upper surface 52 that iselevationally lower than upper surface 41 of insulative mass 40. It isnoted that such is an exemplary application of the present invention,and that other applications are encompassed by the present inventionwherein upper surface 52 is at the same elevational height as uppersurface 41, or is above the elevational height of upper surface 41.Sacrificial layer 50 can also be referred to as a protective layer inthat sacrificial layer 50 protects a portion of mass 44 from exposure toetching conditions, and protects mass 44 from debris associated withsubsequent etching and/or polishing conditions.

[0031]FIG. 3 illustrates wafer fragment 10 after the fragment has beenexposed to chemical-mechanical polishing and/or etching. Such polishingand/or etching removes mass 44 from over upper surface 41 of insulativematerial 40. The polish and/or etch can also remove some of insulativematerial 40 to reduce a height of upper surface 41. Dry or wet etchingconditions can be used for removing mass 44 from over surface 41.

[0032] In the shown embodiment in which upper surface 52 of sacrificiallayer 50 is provided beneath upper surface 41 of mass 40, the polishand/or etch can remove some of material 44 from within opening 42 toleave a recessed upper surface 53 of material 44 within opening 42. Inother embodiments (not shown) in which sacrificial mass 50 has an uppersurface coextensive with upper surface 41, or above upper surface 41,mass 44 would typically not have a recessed upper surface within opening42.

[0033] Referring to FIG. 4, a nitrogen-containing mass 60 is formed overupper surface 41 of silicon oxide-containing mass 40.Nitrogen-containing mass 60 can comprise, for example, silicon nitride,and can be formed by chemical vapor deposition (CVD), preferably byplasma enhanced CVD (PECVD). The CVD preferably comprises a temperatureof less than or equal to 200° C., and a pressure of from about 1 Torr toabout 10 Torr. The CVD conditions can be utilized to deposit less thanor equal to about 200 Å of silicon nitride over silicon oxide-containingmass 40, and preferably are utilized to deposit from about 20 Å to about30 Å of silicon nitride on silicon oxide-containing mass 40. In theshown embodiment, nitrogen-containing mass 60 extends across surface 52of sacrificial material 50, as well as across recessed upper surfaces 53of silicon-containing mass 44. If sacrificial mass 50 comprisesphotoresist, then the material will be a porous material, andaccordingly the portion of nitrogen-containing mass 60 over material 50can also be relatively porous. Such portion can thus be removedutilizing typical conditions for stripping photoresist material 50 fromwithin opening 42.

[0034] Referring to FIG. 5, sacrificial mass 50 (FIG. 4), is removedfrom within opening 42. Such leaves nitrogen-containing mass 60 oversilicon oxide-containing mass 40, and over upper regions 53 ofsilicon-containing mass 44. However, nitrogen-containing mass 60 doesnot extend across a predominant portion of the surface 46 ofsilicon-containing mass 44.

[0035] A nitrogen-containing layer 62 is shown formed over surface 46 ofsilicon-containing material 44. Nitrogen-containing layer 62 cancomprise, for example, silicon nitride, and can be formed by exposingsilicon-containing mass 44 to ammonia under the conditions describedpreviously with respect to FIG. 1. Such exposure can, as described withrespect to FIG. 1, remove native oxide from over surface 46, and form aprotective silicon nitride material (shown as layer 62) over surface 46.Layer 62 can be considered a nitrogen-comprising mass formed acrosssilicon-containing material 44, and not across silicon oxide-containingmaterial 40. Specifically, the exposure of fragment 10 to ammonia willselectively form silicon nitride from the exposed silicon-containingsurface 46, but would not form any significant amount of silicon nitridefrom exposed surfaces of the silicon nitride material 60 already presentover silicon oxide-containing mass 40. The exposure to ammonia andformation of layer 62 shown at the processing step of FIG. 5 willtypically be omitted if such exposure and nitride layer formationoccurred at the FIG. 1 processing step. Generally, the particularprocessing steps in which it can be most suitable to expose asilicon-containing material to ammonia are during or after formation oflayer 44 and before formation of layer 66.

[0036] Referring to FIG. 6, a silicon nitride layer 66 is deposited oversilicon nitride materials 60 and 62. Silicon nitride layer 66 can be athermally formed nitride, or can be deposited by, for example, lowpressure chemical vapor deposition utilizing a temperature of less thanor equal to 750° C., and a pressure of from about 20 mTorr to about 2Torr. Layer 66 can be deposited to a thickness of less than or equal toabout 100 Å, and preferably is deposited to a thickness of from about 40Å to about 50 Å. Layer 66 can consist of, or consist essentially ofsilicon nitride.

[0037] It is noted that material 62 is an optional layer in theembodiment of FIG. 6, and that the invention also encompassesembodiments wherein layer 66 is chemical vapor deposited directly ontosilicon-containing mass 44 while being deposited onto silicon nitridemass 60. Regardless, it is to be understood that silicon nitride layer66 is deposited across silicon oxide-containing mass 40 while beingsimultaneously deposited across silicon-containing mass 44, and grows atabout the same rate over both silicon oxide-containing mass 40 andsilicon-containing mass 44.

[0038] Ultimately, silicon nitride layers 60 and 66 together comprise abarrier layer over silicon oxide-containing mass 40, and layers 62 and66 together define a dielectric material over silicon-containing mass44. The dielectric material extending across silicon-containing mass 44can further comprise an oxide layer (not shown) if a native oxideremains between silicon-containing mass 44 and the deposited siliconnitride layer 66. Such silicon dioxide layer is likely to result inembodiments in which nitrogen-comprising layer 62 is omitted.

[0039] Each of layers 60, 62 and 66 can be referred to as anitrogen-comprising mass, and each of the layers can consist of, orconsist essentially of silicon nitride. In particular terminology of thepresent invention, layer 60 can be referred to as a firstnitrogen-containing mass, layer 66 as a second nitrogen-containing mass,and layer 62 as an optional third nitrogen-containing mass.

[0040]FIG. 7 illustrates a capacitor construction 80 comprising thematerials of the FIG. 6 construction. Capacitor construction 80 isformed by depositing a layer 82 of dielectric material over the siliconnitride layer 66. Layer 82 can comprise, for example, silicon dioxide.Of course, since silicon nitride layer 66 is itself a dielectricmaterial, the invention also encompasses embodiments wherein layer 82 isomitted. In such embodiments, silicon nitride comprised by one or moreof layers 66 and 62 can be the only dielectric material in the capacitorconstruction.

[0041] A conductive capacitor electrode 84 is formed over dielectricmaterial 82. Conductive electrode 84 can comprise, for example,conductively doped polycrystalline silicon. In the capacitorconstruction 80, the silicon-containing material 44 is aconductively-doped material that defines a first capacitor electrode ofthe capacitor construction. Further, dielectric materials 62, 66 and 82define a dielectric region of the capacitor that separates firstelectrode 44 from second electrode 84. Capacitor construction 80 can beincorporated into a DRAM device. In the shown embodiment, source/drainregion 18 is electrically connected to a bit line 90.

[0042] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a nitrogen-containing mass, comprising: providinga substrate, the substrate comprising a silicon-containing mass and asilicon oxide-containing mass; the silicon-containing mass havingsubstantially no oxygen therein; forming a first nitrogen-containingmass to be across the silicon oxide-containing mass and not across apredominate portion of the silicon-containing mass; and after formingthe first nitrogen-containing mass, forming a second nitrogen-containingmass which extends across the silicon-containing mass and across thesilicon oxide-containing mass; the second nitrogen-containing mass beingover the first nitrogen-containing mass.
 2. The method of claim 1wherein the first nitrogen-containing mass is across at least some ofthe silicon-containing mass.
 3. The method of claim 1 wherein theforming the first nitrogen-containing mass to be across the siliconoxide-containing mass and not across the silicon-containing masscomprises: forming a protective layer which is over thesilicon-containing mass and not over the silicon oxide-containing mass;forming the first nitrogen-containing mass after forming the protectivelayer; and removing the protective layer after forming the firstnitrogen-containing mass.
 4. The method of claim 1 wherein the substratefurther comprises a layer of silicon oxide over the silicon-containingmass.
 5. The method of claim 1 wherein the silicon-containing massconsists essentially of silicon.
 6. The method of claim 1 wherein thesilicon-containing mass consists essentially of conductively-dopedsilicon.
 7. The method of claim 1 wherein the silicon-containing massconsists of conductively-doped silicon.
 8. The method of claim 1 whereinthe silicon-containing mass comprises polycrystalline silicon.
 9. Themethod of claim 1 wherein the silicon-containing mass comprisesconductively-doped polycrystalline silicon.
 10. The method of claim 1wherein the silicon-containing mass comprises hemispherical grainpolycrystalline silicon.
 11. The method of claim 1 wherein the siliconoxide-containing mass comprises borophosphosilicate glass.
 12. Themethod of claim 1 wherein the first nitrogen-containing mass comprisessilicon nitride.
 13. The method of claim 1 wherein the firstnitrogen-containing mass comprises silicon nitride and is formed bychemical vapor deposition of silicon nitride on the siliconoxide-containing mass.
 14. The method of claim 1 wherein the secondnitrogen-containing mass comprises silicon nitride.
 15. The method ofclaim 1 further comprising forming a third nitrogen-containing mass overthe silicon-containing mass prior to forming the secondnitrogen-containing mass.
 16. A method of forming a silicon nitridelayer, comprising: providing a substrate, the substrate comprising anon-oxidized silicon-containing mass and a silicon oxide-containingmass; forming a sacrificial layer over the non-oxidizedsilicon-containing mass; while the sacrificial layer is over thenon-oxidized silicon-containing mass, forming a nitrogen-containing massacross the silicon oxide-containing mass; after forming thenitrogen-containing mass, removing the sacrificial layer; and afterremoving the sacrificial layer, forming a silicon nitride layer whichextends across the non-oxidized silicon-containing mass and extendsacross the nitrogen-containing mass.
 17. The method of claim 16 whereinthe non-oxidized silicon of the non-oxidized silicon-containing masscomprises polycrystalline silicon.
 18. The method of claim 16 whereinthe non-oxidized silicon of the non-oxidized silicon-containing masscomprises hemispherical grain polycrystalline silicon.
 19. The method ofclaim 16 wherein the silicon oxide-containing mass comprisesborophosphosilicate glass.
 20. The method of claim 16 wherein thenitrogen-containing mass comprises silicon nitride.
 21. The method ofclaim 16 wherein the nitrogen-containing mass comprises silicon nitrideand is formed by chemical vapor deposition of silicon nitride on thesilicon oxide-containing mass.
 22. The method of claim 21 wherein thenitrogen-containing mass is formed to a thickness of from about 40 Å toabout 100 Å.
 23. The method of claim 21 wherein the nitrogen-containingmass is formed to a thickness of from about 40 Å to about 50 Å.
 24. Themethod of claim 16 wherein the sacrificial layer comprises photoresist.25. The method of claim 16 further comprising forming anitrogen-containing layer over the non-oxidized silicon-containing massprior to forming the silicon nitride layer.
 26. The method of claim 25wherein the nitrogen-containing layer is formed prior to forming thesacrificial layer.
 27. The method of claim 25 wherein thenitrogen-containing layer is formed after forming the sacrificial layer.28. The method of claim 25 wherein the nitrogen-containing layer isformed by exposing the non-oxidized silicon-containing mass to ammonia.29. The method of claim 25 wherein the nitrogen-containing layer isformed by exposing the non-oxidized silicon-containing mass to ammoniaat a temperature of from about 300° C. to about 900° C. and a pressureof from about 2 mTorr to about 1 atmosphere.
 30. The method of claim 25wherein the nitrogen-containing layer is formed by exposing thenon-oxidized silicon-containing mass to ammonia at a temperature of fromabout 300° C. to about 900° C. and a pressure of from about 1 Torr toabout 10 Torr.
 31. The method of claim 25 wherein thenitrogen-containing layer is formed to a thickness of less than or equalto about 10 Å.
 32. The method of claim 25 wherein thenitrogen-containing layer is formed to a thickness of from at leastabout 5 Å to about 10 Å.
 33. A method of forming a silicon nitridelayer, comprising: providing a substrate, the substrate comprising afirst mass and a second mass, the first mass comprising silicon and thesecond mass comprising silicon oxide; forming a sacrificial layer overthe first mass; while the sacrificial layer is over the first mass,forming a nitrogen-containing material across the second mass; afterforming the nitrogen-containing material, removing the sacrificiallayer; after removing the sacrificial layer, forming a silicon nitridelayer which extends across the first and second masses, the siliconnitride layer being over the nitrogen-containing material; andconductively-doping the first mass.
 34. The method of claim 33 whereinthe conductively-doping of the first mass occurs prior to forming thesilicon nitride material.
 35. The method of claim 33 wherein the firstmass comprises polycrystalline silicon.
 36. The method of claim 33wherein the first mass comprises hemispherical grain polycrystallinesilicon.
 37. The method of claim 33 wherein the second mass comprisesborophosphosilicate glass.
 38. The method of claim 33 wherein thenitrogen-containing material comprises silicon nitride.
 39. The methodof claim 33 wherein the sacrificial layer comprises photoresist.
 40. Amethod of forming a capacitor construction, comprising: providing asubstrate, the substrate comprising a first mass and a second mass, thefirst mass comprising silicon and the second mass comprising siliconoxide; forming a sacrificial layer over the first mass; while thesacrificial layer is over the first mass, forming a nitrogen-containingmaterial across the second mass; after forming the nitrogen-containingmaterial, removing the sacrificial layer; after removing the sacrificiallayer, forming a silicon nitride layer which extends across the firstand second masses, the silicon nitride layer being over thenitrogen-containing material; conductively-doping the first mass todefine a first capacitor electrode; and forming a second capacitorelectrode spaced from the first capacitor electrode by at least thesilicon nitride layer; the silicon nitride layer, first capacitorelectrode and second capacitor electrode together defining at least aportion of a capacitor construction.
 41. The method of claim 40 furthercomprising forming a silicon oxide layer over the silicon nitride layerprior to forming the second capacitor electrode; the second capacitorelectrode being spaced from the first capacitor electrode by both thesilicon nitride layer and the silicon oxide layer.
 42. The method ofclaim 40 wherein the conductively-doping of the first mass occurs priorto forming the nitrogen-containing material.
 43. The method of claim 40wherein the first mass comprises polycrystalline silicon.
 44. The methodof claim 40 wherein the first mass comprises hemispherical grainpolycrystalline silicon.
 45. The method of claim 40 wherein the secondmass comprises borophosphosilicate glass.
 46. The method of claim 40wherein the nitrogen-containing material comprises silicon nitride. 47.The method of claim 40 wherein the sacrificial layer comprisesphotoresist.
 48. The method of claim 40 wherein the nitrogen-containingmaterial comprises silicon nitride and is formed by chemical vapordeposition of silicon nitride on the second mass.
 49. The method ofclaim 48 wherein the nitrogen-containing material is formed to athickness of from about 40 Å to about 100 Å.
 50. The method of claim 48wherein the nitrogen-containing material is formed to a thickness offrom about 40 Å to about 50 Å.
 51. The method of claim 40 furthercomprising forming a nitrogen-containing layer over the first mass priorto forming the silicon nitride layer.
 52. The method of claim 51 whereinthe nitrogen-containing layer is formed prior to forming the sacrificiallayer.
 53. The method of claim 51 wherein the nitrogen-containing layeris formed after forming the sacrificial layer.
 54. The method of claim51 wherein the nitrogen-containing layer is formed by exposing the firstmass to ammonia.
 55. The method of claim 51 wherein thenitrogen-containing layer is formed by exposing the first mass toammonia at a temperature of from about 300° C. to about 900° C. and apressure of from about 2 mTorr to about 1 atmosphere.
 56. The method ofclaim 51 wherein the nitrogen-containing layer is formed by exposing thefirst mass to ammonia at a temperature of from about 300° C. to about900° C. and a pressure of from about 1 Torr to about 10 Torr.
 57. Themethod of claim 51 wherein the nitrogen-containing layer is formed to athickness of less than or equal to about 10 Å.
 58. The method of claim51 wherein the nitrogen-containing layer is formed to a thickness offrom at least about 5 Å to about 10 Å.